Last edited by Vole
Wednesday, July 8, 2020 | History

2 edition of Rectifying semi-conductor contacts. found in the catalog.

Rectifying semi-conductor contacts.

Heinz K. Henisch

Rectifying semi-conductor contacts.

by Heinz K. Henisch

  • 85 Want to read
  • 30 Currently reading

Published by Clarendon Press in Oxford .
Written in English

    Subjects:
  • Electric current rectifiers,
  • Semiconductors

  • Edition Notes

    Bibliography: p. [352]-367.

    SeriesThe International series of monographs on physics
    The Physical Object
    Paginationxii, 372 p. illus. ;
    Number of Pages372
    ID Numbers
    Open LibraryOL18836949M

    An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I-V) curve as with Ohm's resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. Transistors covers the main thread of transistor development. This book is organized into 2 parts encompass and starts with an overview of the semi-conductor physics pertinent to the understanding of transistors, as well as features and applications of the point contact devices and junction devices.

    For more than three decades, SiC has been investigated as a wide band gap semiconductor. This paper reviews ohmic and rectifying metal contacts on n- and p-type α- and β-SiC reported throughout. The contact may be rectifying, which only allows current to pass in one direction. Alternatively, it could be ohmic, in which case current can pass in either direction. Here we will discuss the rectifying contact, sometimes called the Schottky barrier contact. The schematic below shows a metal and an n-type semiconductor.

      Rectifying Contacts Tunneling Current Minority-Carrier Injection MIS Tunnel Diode Measurement of Barrier Height Activation-Energy Measurement Photoelectric Measurement Ohmic Contacts Each topic is complete with diagrams, equations and other forms of graphical representations for better learning and quick understanding. TY - CHAP. T1 - Ohmic Contacts to GaN. AU - Hartlieb, Philip J. AU - Davis, Robert F. AU - Nemanich, Robert. PY - /6/7. Y1 - /6/7. N2 - The Schottky-Mott, Bardeen, and metal-induced gap state models of the formation of the Schottky barrier at a metal-semiconductor contact interface and the relative importance of each model to ohmic contact behavior on GaN are described.


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Rectifying semi-conductor contacts by Heinz K. Henisch Download PDF EPUB FB2

Rectifying semiconductor contacts: H.K. Henisch. Clarendon Press, Oxford, pp., 70s. Rectifying semi-conductor contacts — First published in Subjects Electric contacts, Electric current rectifiers, Semiconductors, German literature, History and criticism, Creation (Literary, Cited by: Rectifying semi-conductor contacts.

Oxford, Clarendon Press, (OCoLC) Online version: Henisch, Heinz K. Rectifying semi-conductor contacts. Oxford, Clarendon Press, (OCoLC) Document Type: Book: All Authors / Contributors: Heinz K Henisch. In a Rectifying semi-conductor contacts.

book readable style, this book presents what is currently known about the electrical properties of semiconductor contacts by relating concepts to the means of testing them. It bridges the gap between the high-level abstractions of the modern theory of solids and phenomenological treatments widely employed in device physics.5/5(1).

The distinction between contacts on "lifetime" and "relaxation" semiconductors is carefully developed. Comprehenive and up-to-date, this volume replaces the author's highly successful Rectifying Semiconductor Contacts (Oxford, ). It is the best specialized book on semiconductor contacts currently available.

Read more Read less5/5(1). The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century.

The rectifying properties of metal-semiconductor contacts were first described by Braun in A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time.

The most commonly used rectifying contact is the Schottky barrier diode (SBD). Because of its fast response to signals, the SBD has found several applications in analog circuits where switching speed is important. A contact is said to be ohmic, i.e., non-rectifying, if it exhibits negligible resistance to current in both voltage polarities.

Most semiconductor devices are interconnected on the chip and brought to. A contact between metal and silicon can be rectifying or ohmic. The most commonly used rectifying contact is the Schottky barrier diode (SBD). A contact is said to be ohmic, i.e., non-rectifying.

Rectifying Contacts When Ф M contact is called rectifying Ф M Semiconductor N-type V • A rectifying contact is one in which a forward bias drives a large current but a reverse bias results in a small current. • Despite efforts, contacts are not ideal. • In Si, exposure to air causes SiO.

With different characteristics of the metal-semiconductor interface, two types of MS contact will be formed: the rectifying Schottky barrier contact and the Ohmic contact. Schottky Barrier Contact The Schottky barrier contact refers to the MS contact having a large potential barrier height formed when the Fermi energy of the metal and the.

A contact between metal and silicon can be rectifying or ohmic. The most commonly used rectifying contact is the Schottky barrier diode (SBD). A contact is said to be ohmic, i.e., non-rectifying, if it exhibits negligible resistance to current in both voltage polarities.

Most semiconductor devices are interconnected on the chip and brought to the “outside world” by means of ohmic contacts and metal. the semiconductor (Fig. 3c). Contact Resistance and Specific Contact Resistivity (ρc) Contact resistance is a measure of the ease with which current can flow across a metal-semiconductor interface.

In an ohmic interface, the total current density J entering the interface is a function of the difference in the equilibrium Fermi levels on the. This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology.

Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts/5(3).

An illustration of an open book. Books. An illustration of two cells of a film strip. Video. An illustration of an audio speaker. Audio. An illustration of a " floppy disk. Software An illustration of two photographs. Rectifying semi-conductor contacts Item Preview remove-circle.

The rectifying properties of metal-semiconductor contacts were first described by Braun in A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time.

A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in Metal-semiconductor contacts are an obvious component of any semiconductor device.

At the same time, such contacts cannot be assumed to have a resistance as low as that of two connected metals. In particular, a large mismatch between the Fermi energy of the metal and semiconductor can result is a high-resistance rectifying contact.

The characteristics of contacts between metals and semiconductors are discussed on their energy band diagrams. Depending upon the relative magnitudes of their work functions, ideally the contact can either be rectifying (Schottky barrier) or ohmic.

Rectifying Semi-Conductor Contacts Author is H. Henisch Hardcover R Publisher: Oxford at the Clarendon Press, London, Used - Very Good. Ex lib. No Jacket. Hard Cover. pgs. Diagrams. adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A.

Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well.

Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful. The three-dimensional contact system has no restriction in the topology. Both metal potential vm and semiconductor potential v are functions of the spatial coordinate x, y, z.

In the heavily doped semiconductor region normally used in VLSI contacts, the following approximations can be made: (1) The effect of minority carriers is neglected.

- Buy Semiconductor Contacts: An Approach to Ideas and Models (International Series of Monographs on Physics) book online at best prices in India on Read Semiconductor Contacts: An Approach to Ideas and Models (International Series of Monographs on Physics) book reviews & author details and more at Free delivery on qualified s: 1.SMA - Compound Semiconductors Lecture 2 - Metal-Semiconductor Junctions - Outline • Introduction Structure - What are we talking about?

Behaviors: Ohmic, rectifying, neither • Band picture in thermal equilibrium (Establishing the baseline) Ideal junction - no surface states Real junctions - surface states and Fermi level pinning • Applying voltage bias (i-v and c-v) (Where it gets.